Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics |
| |
| Authors: | V. Mikhelashvili B. Meyler J. Shneider O. Kreinin G. Eisenstein |
| |
| Affiliation: | Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200, Israel |
| |
| Abstract: | A low effective oxide thickness of 1.45 nm was achieved in HfAlO films deposited by an electron beam gun evaporator on unheated p-Si substrate. A reduction of the leakage current density from 1 × 10−4 to 4.5 × 10−7 A/cm2, at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra thin films. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
