Silicon metal-dielectric-semiconductor varicaps with an yttrium oxide dielectric |
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Authors: | V A Rozhkov A Yu Trusova |
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Affiliation: | (1) Samara State University, Samara |
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Abstract: | This paper reports an investigation of the electrophysical properties of metal-dielectric-semiconductor varicaps with an yttrium
oxide dielectric, prepared by resistive vacuum evaporation of the rare-earth metal with subsequent thermal oxidation of the
film in air at 500–550 °C. It is found that the electrical conductivity of the samples follows the Poole-Frenkel law. High-frequency
capacitance-voltage characteristics are used to determine the specific capacitance of the dielectric, C
0=0.027–0.03 μF/cm2, the slope of the capacitance-voltage characteristic, dC/dV=35–40 pF/V, the fixed charge in the dielectric, Q
f=(1.7−2.7)×10−8 C/cm2, and the density of surface states at the flat-band potential, N
ss=(1−2)×1011 cm−2·eV−1. The capacitance tuning range factor for the metal-dielectric-semiconductor varicaps is 2.5–3. These structures are shown
to be applicable as metal-dielectric-semiconductor varicaps with a low control voltage and a high quality factor.
Pis’ma Zh. Tekh. Fiz. 23, 50–55 (June 26, 1997) |
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