Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN |
| |
Authors: | Young Soo Yoon Han-Ki Kim |
| |
Affiliation: | (1) Department of Advanced Technology Fusion (DATF), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul, 143-701, Korea;(2) School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701, Korea |
| |
Abstract: | We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 1017 cm−3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific
contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600∘C for 2 min in flowing N2 atmosphere resulted in a specific contact resistivity of 3.1 × 10−5 Ω cm2. Both GXRD and AES depth profile results show that Ga3Pt5, Ga2Pd5, and Au7Ga2 phases are formed at the interface region between metal and GaN when annealed at temperatures 600∘C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au
contacts. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|