| 表面钝化对Ge MOS电容可靠性的影响 |
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| 引用本文： | 邹晓,徐静平.表面钝化对Ge MOS电容可靠性的影响[J].微电子学,2009,39(4). |
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| 作者姓名： | 邹晓 徐静平 |
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| 作者单位： | 1. 江汉大学,机电系,武汉,430056
2. 华中科技大学,电子科学与技术系,武汉,430074 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 通过NO、N2O对Ge衬底进行表面钝化,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高k栅介质.研究了表面钝化对Ge MOS器件性能的影响.实验结果表明,湿NO表面钝化能生长高质量GeOxNy界面层,有效降低MOS电容的栅极漏电流,增强器件的可靠性.
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| 关 键 词： | 表面钝化 界面层 |
Effects of Surface Passivation on Reliability of Ge MOS Capacitors |
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| ZOU Xiao,XU Jingping.Effects of Surface Passivation on Reliability of Ge MOS Capacitors[J].Microelectronics,2009,39(4). |
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| Authors: | ZOU Xiao XU Jingping |
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| Affiliation: | 1.Dept.of Electromachine Engineering;Jianghan University;Wuhan 430056;P.R.China;2.Dept.of Electronic Science & Technology;Huazhong University of Science and Technology;Wuhan 430074;P.R.China |
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| Abstract: | Surface of Ge substrate was passivated with NO and N2O.HfTiN film prepared using reactive co-sputtering was annealed by wet N2,and transformed into HfTiON high-k gate dielectric.Effect of surface passivation on performance of Ge MOS devices was studied.Results indicated that,with wet NO surface passivation,high-quality GeOxNy interface could be obtained,efficiently decreasing gate leakage and enhancing reliability of Ge MOS devices. |
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| Keywords: | Ge MOS HfTiON |
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