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陷光结构在GaAs薄膜太阳电池中的应用
引用本文:刘雨生,刘雯,张淑媛,杨富华,王晓东.陷光结构在GaAs薄膜太阳电池中的应用[J].材料导报,2017,31(11):11-19.
作者姓名:刘雨生  刘雯  张淑媛  杨富华  王晓东
作者单位:1. 中国科学院半导体研究所半导体集成技术工程研究中心,北京,100083;2. 中国科学院半导体研究所半导体集成技术工程研究中心,北京100083;中国科学院大学微电子学院,北京101408
基金项目:国家自然科学基金(61274066;61474115;61504138);863项目(2014AA032602)
摘    要:陷光结构由于其独特的光学特性,在光伏器件中发挥的作用越来越重要。目前硅基太阳电池中陷光结构的应用很常见,然而在GaAs薄膜太阳电池中陷光结构的报道并不多。详细介绍了陷光结构的原理及其在GaAs薄膜电池中的研究现状和应用情况。综述了GaAs薄膜太阳能电池中常用的三类陷光结构:正面陷光结构(包括纳米颗粒、纳米线、纳米锥等)、背面陷光结构(如镜面背反射层)以及混合陷光结构。大量研究表明,陷光结构的使用可以进一步提高GaAs薄膜电池的光电转换效率,一定程度上达到降低电池生产成本的目的。

关 键 词:GaAs薄膜太阳电池  正面陷光结构  背面陷光结构  混合陷光结构

Applying Light Trapping Structure to GaAs Thin Film Solar Cells:A State-of-the-Art Review
LIU Yusheng,LIU Wen,ZHANG Shuyuan,YANG Fuhua and WANG Xiaodong.Applying Light Trapping Structure to GaAs Thin Film Solar Cells:A State-of-the-Art Review[J].Materials Review,2017,31(11):11-19.
Authors:LIU Yusheng  LIU Wen  ZHANG Shuyuan  YANG Fuhua and WANG Xiaodong
Affiliation:Engineering Research Center of Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,Engineering Research Center of Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,Engineering Research Center of Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,Engineering Research Center of Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;School of Microelectronics, University of Chinese Academy of Sciences, Beijing 101408 and Engineering Research Center of Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;School of Microelectronics, University of Chinese Academy of Sciences, Beijing 101408
Abstract:Owing to its unique optical properties, light trapping structure plays a more and more important role in the photovoltaic devices. At present, the application of light trapping structure in silicon-based solar cells is quite popular, but its application in GaAs thin film solar cells is little reported. In this article, the principle, research status of light trapping structure and its applications in GaAs thin film solar cells are introduced in detail. Three kinds of light trapping structures for GaAs thin film solar cells are summarized,including light trapping structure on the front surface(such as metal nanoparticle, nanowire, nanocone, etc.),light trapping structure on the back surface(such as back reflection layer), and hybrid light trapping structure. It shows that the application of light trapping structure can further improve photoelectric conversion efficiency of the GaAs thin film solar cells, and can also achieve the goal of reducing the production cost of the solar cells.
Keywords:GaAs thin film solar cell  light trapping structure on the front surface  light trapping structure on the back surface  hybrid light trapping structure
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