| FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION |
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| 引用本文： | E. Q. Xie,W. W. Wang,N. Jiang and D. Y. He Department of Physics,Lanzhou University,Lanzhou 730000,China. FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION[J]. 金属学报(英文版), 2002, 15(2): 221-226 |
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| 作者姓名： | E. Q. Xie W. W. Wang N. Jiang and D. Y. He Department of Physics Lanzhou University Lanzhou 730000 China |
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| 作者单位： | E. Q. Xie，W. W. Wang，N. Jiang and D. Y. He Department of Physics，Lanzhou University，Lanzhou 730000，China |
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| 基金项目： | This work has been supported jointly by the National Natural Science Foundation ofChina (Crant No. 69806005)，the Natural Scie |
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| 摘 要： | 1. IntroductionThe transition metal silicides have attraeted much attention because of their potentialapplicatiOIl in very large scale integration (VLSI) de.ice[1]. Near-noble metal silicides canbe used as Schottky al1d ohn1ic col1tacts in silicon-based d…
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| 收稿时间： | 2001-07-31 |
| 修稿时间： | 2001-10-30 |
FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION |
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| E.Q.Xie,W.W.Wang,N.Jiang,D.Y.He. FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION[J]. Acta Metallurgica Sinica(English Letters), 2002, 15(2): 221-226 |
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| Authors: | E.Q.Xie W.W.Wang N.Jiang D.Y.He |
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| Affiliation: | Department of Physics,Lanzhou University,Lanzhou 730000,China |
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| Abstract: | Manganese silicide MnSi2-x thin films have been prepared on n-type silicon substratesthrough solid phase reaction. The heterostructures were analyzed by X-ray diffraction,Rutherford backscattering spectroscopy, Fourier transform infrared transmittance spec-troscopy and the four-point probe technique. The results show that two manganese sili-cides have been formed sequentially via the reaction of thin layer Mn with Si substrateat different irradiation annealing stages, i.e., MnSi at 450℃ and MnSi1.73 at 550℃.MnSi1.73 phase exhibits preferred growth after irradiation with infrared. In situ four-point probe measurements of sheet resistance during infrared irradiation annealingshow that nucleation of MnSi and phase transformation of MnSi to MnSi1. 73 occur at410℃ and 530℃, respectively; the MnSi phase shows metallic behavior, while MnSi1.73exhibits semiconducting behavior. Characteristic phonon bands of MnSi2-x silicides,which can be used for phase identification along with conventional XRD techniques,have been observed by FTIR spectroscopy. |
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| Keywords: | manganese suicide in situ sheet resistance solid phase reaction infrared spectra |
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