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Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon |
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| Authors: | Rykaczewski Konrad Hildreth Owen J Wong Ching P Fedorov Andrei G Scott John Henry J |
| Affiliation: | Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899-8370, USA. konrad.rykaczewski@nist.gov |
| Abstract: | A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry. |
| Keywords: | Nanostructures Patterning 3D Fabrication Focussed Ion Beam Electron Beam Induced Deposition Metal‐Assisted Chemical Etching |
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