Correlation between photoluminescence data and device performance of p-channel strained-layer materials

The 4-K photoluminescence spectrum and room temperature transconductance for modulation dopedp-type GaAs/(In,Ga)As dual-channel strained-quantum-well field-effect transistors with comparable dopant and 2-D carrier concentrations were studied. All gate sizes were nominally 300 μm wide by 1 μm long. The best sample has a peak normalized extrinsic transconductanceg _moat room temperature of 31 mS/mm and a 4K photoluminescence linewidth of 6 meV. Depending upon the sample,g _movaried from about 0.5 to 31 mS/mm while the 4-K photoluminescence linewidth decreased from 26 to 6 meV. The low-temperature photoluminescence linewidth and room temperature transconductance were correlated. These results indicate that photoluminescence spectroscopy can be used for screening wafers for potential device peformance before processing.