| Cu掺杂n型硅材料的制备及热敏特性研究 |
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| 引用本文： | 范艳伟,周步康,王军华,陈朝阳,常爱民. Cu掺杂n型硅材料的制备及热敏特性研究[J]. 半导体学报, 2015, 36(1): 013004-4. DOI: 10.1088/1674-4926/36/1/013004 |
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| 作者姓名： | 范艳伟 周步康 王军华 陈朝阳 常爱民 |
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| 基金项目： | 国家高技术研究发展计划（863计划）(No.2012AA091102 ) ,新疆自然科学基金(No.2010211B24) |
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| 摘 要： | 通过高温扩散的方法制备出铜掺杂的n型单晶硅材料，详细研究了不同制备条件所得材料的电学及热敏特性。结果表明当铜表面源浓度为1.83×10-7mol/cm2时，1200℃下扩散2个小时得到的铜掺杂补偿硅材料的电阻率达到最大值46.2Ω?cm。测试表明铜掺杂n型单晶硅材料具有良好的负温度系数热敏特性，B值分布于3010K-4130K之间。
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| 关 键 词： | single-crystal silicon deep level impurity copper |
Preparation and thermal-sensitive characteristic of copper doped n-type silicon material |
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| Fan Yanwei,Zhou Bukang,Wang Junhu,Chen Zhaoyang and Chang Aimin. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. Chinese Journal of Semiconductors, 2015, 36(1): 013004-4. DOI: 10.1088/1674-4926/36/1/013004 |
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| Authors: | Fan Yanwei Zhou Bukang Wang Junhu Chen Zhaoyang Chang Aimin |
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| Affiliation: | 1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;2. Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China |
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| Abstract: | |
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| Keywords: | single-crystal silicon deep level impurity copper |
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