GaInAsP过渡层在808 nm GaAsP/(Al)GaInP半导体激光器中降电压的应用

利用金属有机化学气相沉积的方法在GaAs衬底上生长了GaInAsP外延层及GaAsP/(Al)GaInP激光器外延层。生长的GaInAsP外延层与GaAs晶格匹配,并且带隙处于Ga_0.5In_0.5P与GaAs中间。在GaInP/GaAs异质结界面插入此结构的GaInAsP过渡层,可以有效的降低异质结的带阶,尤其是价带带阶。相比于突变GaInP/GaAs异质结的808 nm GaAsP/(Al)GaInP半导体激光器,含有GaInAsP过渡层的半导体激光器具有更低的工作电压。因此,在350 mW输出功率下,半导体激光器的功率转换效率由52%提高至60%。并且在大电流注入下,含有GaInAsP过渡层的半导体激光器由于产生的焦耳热减少,具有更高的输出功率。

Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer

GaInAsP layers and GaAsP/ (Al) GaInP laser diodes (LDs) have been grown on GaAs substrates by metalorganic chemical vapor deposition. The GaInAsP layer, which is lattice matched to GaAs, has an intermediate band gap between Ga_0.5In_0.5P and GaAs. The GaInP/GaAs heterojunction spikes, especially in the valence band, can be suppressed by introducing this thin GaInAsP layer into the heterostructure interface. The 808 nm GaAsP/ (Al) GaInP LDs with GaInAsP intermediate layer show a reduced operating voltage compared to the conventional LDs with abrupt GaInP/GaAs interface due to the enhanced hole injection. As a result, the power conversion efficiency is improved from 52% to 60% at 350 mW output power. At high current injection, the LD with GaInAsP intermediate layer has higher light power owing to the decreased joule heating.