| 单场限环的平面高压器件 |
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| 引用本文： | 汪德文,范英杰,邱海昌. 单场限环的平面高压器件[J]. 微纳电子技术, 2001, 38(6): 42-44 |
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| 作者姓名： | 汪德文 范英杰 邱海昌 |
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| 作者单位： | 1. 深圳深爱半导体有限公司,广东,深圳,518029
2. 电子十三所,河北,石家庄,050051 |
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| 摘 要： | 通过优化设计和充分利用硅片面积 ,研制出了场限环的平面高压半导体分立器件
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| 关 键 词： | 击穿电压 场限环 钝化 |
| 文章编号： | 1001-5507(2001)06-0042-03 |
| 修稿时间： | 2001-08-30 |
High voltage planar discrete semiconductor device with single field limiting rings |
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| WANG De wen ,FAN Ying jie ,QIU Hai chang. High voltage planar discrete semiconductor device with single field limiting rings[J]. Micronanoelectronic Technology, 2001, 38(6): 42-44 |
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| Authors: | WANG De wen FAN Ying jie QIU Hai chang |
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| Affiliation: | WANG De wen 1,FAN Ying jie 2,QIU Hai chang 1 |
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| Abstract: | By optimizing designs and take full advantage of silicon's area,the high voltage planar discrete semiconductor device with single field limiting rings is produced. |
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| Keywords: | breakdown voltage field limiting ring passivation |
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