两种不同工艺CMOS运算放大器的电离辐照响应特性

研究了干氧和氢氧合成两种不同工艺 CMOS运算放大器电路的电离辐照响应特征和变化规律。结果显示 ,虽然对单管特性而言 ,干氧工艺具有较强的抑制辐射感生氧化物电荷和界面态增长的能力 ,但由于在辐照过程中氧化物电荷的形成改变了电路的对称性 ,因而对电路造成比氢氧合成工艺更大的损伤。表明 ,适当的界面态的引入 ,有利于增加负载电流镜的饱和工作范围 ,从而降低电路的辐射敏感性。

The Characteristics of Two Kinds of CMOS Amplifiers' Responses to Total Dose Irradiation

The characteristics of total dose irradiation response of two kind of CMOS amplifiers, one of which was treated with dry oxygen in the process of gate SiO 2 growing, and the another with mixed oxygen and hydrogen, have been study. The results have shown that, though, for the single transistor, the one with dry oxygen processed has more capability to restrain growing of oxide charges and interface states induced by total dose irradiation, it can cause more damage to the circuit as a whole than the one with oxygen hydrogen processed. Because the growing of the oxide charges under radiation destroys the symmetry of amplifier circuit. As a result, proper interface states induced under radiation can be advantageous to wide the effective working arrange of load current mirror, and therefore, greatly reduce the irradiation sensitivity of circuit.