Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures |
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| Authors: | You-Da Lin Yewchung Sermon Wu |
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| Affiliation: | (1) Department of Materials Science and Engineering, National Chiao Tung University, 300 Hsinchu, Taiwan, Republic of China |
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| Abstract: | Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various
temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon
(poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period
to be reduced to Ni metal for the subsequent mediated crystallization of a-Si. |
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| Keywords: | Nickel-induced lateral crystallization (NILC) amorphous silicon polycrystalline silicon oxygen nickel oxide |
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