Mobility-field behavior of fully depleted SOI MOSFET's |
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| Authors: | Wang J. Kistler N. Woo J. Viswanathan C.R. |
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| Affiliation: | Dept. of Electr. Eng., California Univ., Los Angeles, CA; |
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| Abstract: | This work reports measured effective mobility vs. effective vertical electric field and the accompanying experimental method of extraction for the fully depleted (FD) SOI MOSFET. The effective channel mobility vs. effective vertical electric field behavior was investigated as a function of the SOI film doping concentration, the SOI back-gate bias, and the SOI film thickness. The validity of using the approximation, Qi=Cox(VGS-VTH), for the inversion charge density in FD SOI is examined and experimentally confirmed |
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