| 世界GaAs集成电路的发展及我们的对策——1990 IEEE GaAs IC讨论会评述 |
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| 引用本文： | 赵正平. 世界GaAs集成电路的发展及我们的对策——1990 IEEE GaAs IC讨论会评述[J]. 微纳电子技术, 1991, 0(1) |
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| 作者姓名： | 赵正平 |
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| 作者单位： | 机电部第13研究所 石家庄 |
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| 摘 要： | 1990 IEEE GaAs IC讨论会是一次历史性会议。它提供了交流和宣传GaAs IC研究和发展的机会。会议特别关注GaAs IC的全球性进步。本文评述美国、日本和欧洲GaAs IC的进展,并提出发展我国GaAs IC的想法。
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| 关 键 词： | 砷化镓 集成电路 |
Development of the International GaAs IC and Our Considerations:A Review of the 1990 IEEE GaAs IC Symposium |
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| Zhao Zhengping. Development of the International GaAs IC and Our Considerations:A Review of the 1990 IEEE GaAs IC Symposium[J]. Micronanoelectronic Technology, 1991, 0(1) |
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| Authors: | Zhao Zhengping |
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| Abstract: | The 1990 IEEE GaAs IC Symposium was a historical meeting for exchanging and disseminating the latest research and achievements in GaAs ICs. The meeting paid close attention to the global advances of GaAs ICs Those developments in USA,Japan and Europe are reviewed and the idea to developing GaAs IC in our country is subjected. |
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| Keywords: | Gallium arsenid IC |
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