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The MGBT: a new MOS-gated power bipolar transistor
Authors:Ajit   J.S. Kinzer   D.M.
Affiliation:Int. Rectifier Corp., El Segundo, CA;
Abstract:A new device called the MGBT is described in which the upper regions of the device structure are conductivity-modulated by a positive feedback mechanism to give a lower on-state voltage drop compared to a power DMOSFET while having fast switching and fully gate-controlled characteristics. In the MGBT, a P+ injector coupled to the drain potential by a vertical driver DMOSFET in an emitter-switched configuration is used to inject holes which is then diverted to the entire surface region of the device by a novel cell design. 750 V MGBT devices fabricated along with DMOSFET devices on the same wafer showed 33% improvement in current density at room temperature and 46% improvement at 75°C at a forward drop of 3.5 V. The turn-off time of the MGBT was 80 ns equal to that of the DMOSFET
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