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Electronic properties of semiconducting silicides: fundamentals and recent predictions |
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| Authors: | L.I Ivanenko V.L Shaposhnikov A.V Krivosheeva D.B Migas G Behr |
| Affiliation: | a Microelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, Belarus b INFM and Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca via Cozzi 53, 20125 Milan, Italy c Leibniz-Institute of Solid State and Materials Research, P.O. Box 27 01 16, D 01171 Dresden, Germany |
| Abstract: | This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca2Si and BaSi2, recently found RuSi2 phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, β-FeSi2, Mg2Si and CrSi2 with stretched and compressed lattices as well as transport properties of β-FeSi2, ReSi1.75, Ru2Si3 are presented. Prospects for practical applications of semiconducting silicides are discussed. |
| Keywords: | Semiconducting silicides Electronic properties Transport properties |
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