Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

In this report, we propose Al₂O₃ and AlN films as passivation for high-voltage SiC Schottky barrier diodes. A reactive pulse plasma enhanced chemical vapour deposition method is used to form the layers. The comparison between the Schottky barrier diodes with and without passivation shows the effectiveness of Al₂O₃ layer on the reverse current decrease as a result of the surface states reduction.