Fine particle removal by a negatively-charged fine particle collector in silane plasma |
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Authors: | Yuji Kurimoto Naoki Matsuda Satoru Iizuka Noriyoshi Sato |
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Affiliation: | a Graduate School of Engineering, Tohoku University, Aramakiaza-Aoba, Aoba-ku, Sendai 980-8579, Japan b Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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Abstract: | To suppress inclusion of fine particles in amorphous silicon films, a negatively-charged fine particle (NFP) collector has been successfully installed in a silane plasma. Two modes of operation of the NFP collector biasing were examined: (i) turning on after the appearance of fine particles; and (ii) turning on from the very beginning of the plasma operation. While the former proved the effectiveness of the NFP collector in the removal of fine particles, apparently very small particles (<100 nm) removal in the latter reduced the degradation of the photo conductivity in deposited a-Si:H films by light soaking. This effect is accompanied by the increased density of SiH bonding, which can be related to the possible modification in the silicon networks in the amorphous film. |
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Keywords: | Chemical vapor deposition Plasma processing and deposition Silicon Amorphous materials |
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