Epitaxial growth of anatase by reactive sputter deposition using water vapor as the oxidant

The growth of TiO₂ films in the anatase crystal structure was investigated using reactive sputter deposition with H₂O serving as the oxidizing species. With water vapor, the formation of phase-pure anatase TiO₂ thin films via epitaxial stabilization on (001) LaAlO₃ was achieved, although crystallinity was slightly inferior to that obtained when O₂ was employed. Films grown using water vapor exhibited a rougher surface morphology indicating a difference in growth mechanisms. At low H₂O pressure, the formation of a Ti_nO_2n−1 Magnéli phase was observed. When hydrogen was employed during growth, mixed phase films of rutile and anatase resulted. The development of crystallinity and phase as a function of deposition temperature and oxidant pressure are discussed.