Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes |
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| Authors: | T Suemasu K Takakura Y Ozawa F Hasegawa |
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| Affiliation: | a Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
b Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan |
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| Abstract: | In this paper, we review the detailed study of epitaxial growth of β-FeSi2 films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi2 was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi2 epitaxial films reached 6900 and 13000 cm2/V·s for the n- and p-type β-FeSi2, respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi2 particles/n-Si structures prepared by RDE for β-FeSi2 and by MBE for Si. |
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| Keywords: | Iron disilicide RDE MBE PL EL LED |
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