| 一种氧离子注入诱生缺陷的TEM表征 |
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| 引用本文： | 颜秀文,刘东明,胡刚.一种氧离子注入诱生缺陷的TEM表征[J].材料导报,2009,23(Z1). |
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| 作者姓名： | 颜秀文 刘东明 胡刚 |
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| 作者单位： | 1. 中国电子科技集团第48研究所,长沙,410111
2. 复旦大学材料科学系,上海,200433 |
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| 摘 要： | 在利用氧离子注入工艺制备SOI材料的过程中,发现了一种"纳米网状"的结构缺陷.利用透射电镜、选区电子衍射和能谱分析对该缺陷进行了研究.结果表明,该缺陷呈网状,化学成分为硅和氧.初步研究认为,氧离子注入硅中所产生的穿通位错是形成该类缺陷的主要原因.
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| 关 键 词： | 晶体缺陷 离子注入 位错 透射电子显微镜 |
Characterization of an Oxygen Ion Implantation Induced Defect by TEM |
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| YAN Xiuwen,LIU Dongming,HU Gang.Characterization of an Oxygen Ion Implantation Induced Defect by TEM[J].Materials Review,2009,23(Z1). |
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| Authors: | YAN Xiuwen LIU Dongming HU Gang |
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| Abstract: | A new "nano-netted microstructure" defect is detected in separation by implanting oxygen(SIMOX)process.The defect is studied by using transmission electron microscope(TEM),selected area electron diffraction(SAD) and energy dispersive X-ray(EDX).The results show that the defect has many net cells,mainly comprised of silicon and oxygen.It is thought that the formation of this type of defect is related to the line dislocation in oxygen ion implantation preliminarily. |
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| Keywords: | crystalline defects ion implantation dislocation transmission electron microscope |
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