| KTiOAsO4晶体的生长缺陷研究 |
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| 引用本文： | 牟其善,刘希玲,马长勤,王绪宁,路庆明.KTiOAsO4晶体的生长缺陷研究[J].无机材料学报,2000,15(4):584-588. |
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| 作者姓名： | 牟其善 刘希玲 马长勤 王绪宁 路庆明 |
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| 作者单位： | [1]山东教育学院数理系 [2]山东大学晶体材料国家实验室 |
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| 基金项目： | 山东省自然科学基金资助项目(Y98A15018) |
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| 摘 要： | 研究ＫＴｉＯＡｓＯ４的生长缺陷，对于改善它的性质和应用前景有很大的意义，本文利用化学腐蚀光学显微术和同步辐射Ｘ射线形貌术研究了ＫＴｉＯＡｓ析缺陷，实验结果表明，两种腐蚀剂对ＫＴＡ晶体的表面缺陷效果显著，ＫＴＡ晶体中主要的缺陷有铁电畴生产层，形界，位错和包裹物，了这些缺陷形成的原因。
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| 关 键 词： | KTiOAsO4 缺陷 铁电醇 晶体生长 非线性光学晶体 |
| 文章编号： | 1000-324X(2000)04-0584-05 |
| 收稿时间： | 1999-8-23 |
| 修稿时间： | 1999-9-13 |
Research on the Growth Defects of KTiOAsO4 Crystal |
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| MOU Qi-Shan,LIU Xi-Ling,MA Chang-Qin,WANG Xu-Ning,LU Qing-Ming.Research on the Growth Defects of KTiOAsO4 Crystal[J].Journal of Inorganic Materials,2000,15(4):584-588. |
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| Authors: | MOU Qi-Shan LIU Xi-Ling MA Chang-Qin WANG Xu-Ning LU Qing-Ming |
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| Affiliation: | 1.DepartmentofMathandPhysics;ShandongInstituteofEducation;250013;NationalCrystalMaterialsLaboratory;ShandongUniversitylJinan250100;China;2.InstituteofChemistry;ShandongUniversity,Jinan250100,China |
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| Abstract: | It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed. |
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| Keywords: | KTiOAsO4 crystal synchrotron radiation topography defect ferroelectric domain |
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