The dV/dt capability of MOS-gated thyristors |
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| Authors: | Venkataraghavan P. Jayant Baliga B. |
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| Affiliation: | Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC; |
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| Abstract: | In this paper, a detailed study of the dV/dt capability of MOS-gated thyristors is performed. It is shown that in addition to the conventional mode of dV/dt-induced turn-on in thyristors, termed the intrinsic mode, there exists another distinct mode of dV/dt-induced turn-on, peculiar to the MOS-gated thyristor structure, which the authors term the extrinsic dV/dt mode. The effective dV/dt capability is determined by both modes and is degraded by the presence of an external gate-cathode resistance and parasitic gate-anode capacitance. The existence of these two modes of dV/dt-induced turn-on is demonstrated experimentally, and the effect of device parameters on the dV/dt capability is studied |
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