Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor |
| |
Authors: | V. A. Bogdanova N. A. Davletkil’deev N. A. Semikolenova E. N. Sidorov |
| |
Affiliation: | (1) Institute of Semiconductor Physics (Omsk Branch), Siberian Division, Russian Academy of Sciences, Omsk, 644077, Russia |
| |
Abstract: | The results of studying the absorption of infrared radiation by free charge carriers in the GaAs:Te single crystals, grown by the Czochralski method, had the electron concentration n 0=5×1017?6×1018 cm?3 are reported. An analysis of the spectral dependences of the absorption coefficient took into account the spatial correlation in the impurity-charge distribution. It is shown that the short-range correlation model makes it possible to account for the decrease in the absorption coefficient and a weakening of its spectral dependence, in the region of the impurity-mediated free-carrier absorption. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|