Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor

The results of studying the absorption of infrared radiation by free charge carriers in the GaAs:Te single crystals, grown by the Czochralski method, had the electron concentration n ₀=5×10¹⁷?6×10¹⁸ cm^?3 are reported. An analysis of the spectral dependences of the absorption coefficient took into account the spatial correlation in the impurity-charge distribution. It is shown that the short-range correlation model makes it possible to account for the decrease in the absorption coefficient and a weakening of its spectral dependence, in the region of the impurity-mediated free-carrier absorption.