Characterization of deep levels in semi-insulating gallium arsenide |
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| Authors: | Y N Mohapatra N Balasubramanyam Vikram Kumar |
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| Affiliation: | (1) Department of Physics and Materials Research Laboratory, Indian Institute of Science, 560 012 Bangalore, India |
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| Abstract: | Two traps with activation energies ofE
c – 0·47 eV andE
v + 0·79 eV have been detected in semi-insulating GaAs:Cr through optical transient current spectroscopy (otcs) in the temperature range 300–450 K. The latter trap gives rise to rising current transients which result in a negative peak
in theotcs spectrum. The theoretical expressions for current transients have been derived. |
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| Keywords: | Gallium arsenide deep levels activation energy current transients optical transient current spectroscopy |
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