Polyimide-related design considerations in a bipolar technology |
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Authors: | Hook TB |
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Affiliation: | IBM Corp., Essex Junction, VT; |
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Abstract: | It is found that a spurious leakage path from the emitter to the collector of a lateral p-n-p or a trench-defined n-p-n device may be induced by the applied collector voltage. This voltage influences the surface potential at the emitter-base junction through the charging of the polyimide used as interlevel dielectric or as trench fill, respectively. A simple model of the effect is developed, and several successful process features are discussed |
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