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Synthesis of high-purity and high-crystallinity single-walled carbon nanotubes homogeneously dispersed by wet process
Affiliation:1. Department of Electrical and Electric Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumicho, Taihaku-ku, Sendai, Miyagi 982-8577, Japan;2. DOWA Holdings Ltd. Co., 14-1 Sotokanda 4-chome, Chiyoda-ku, Tokyo 101-0021, Japan
Abstract:Field emission (FE) electron sources based on high-purity and high-crystallinity single-walled carbon nanotubes (hc-SWCNTs) are promising electronic devices from the viewpoint of industrial application. However, to utilize high-purity hc-SWCNTs as a component of electronic devices, it is necessary to homogeneously disperse hc-SWCNTs using a wet process. Shear force is required to break up aggregates of hc-SWCNTs to produce a film with uniformly dispersed hc-SWCNTs, but contaminants such as fine graphite in the aggregates disperse the shear force of hc-SWCNT bundles. Therefore, it is necessary to remove these contaminants to achieve the uniform dispersion of hc-SWCNTs. In this study, we have succeeded in the highly efficient synthesis of hc-SWCNTs with few contaminants by the arc discharge method using glass-like carbon as a raw material to produce SWCNTs. It was demonstrated that hc-SWCNTs with low foreign matter contamination can be uniformly dispersed without the need for wet dispersion tools such as a homogenizer and a jet mill. Moreover, the long-term stability of the current emitted by FE devices fabricated using the dispersed solution can be obtained.
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