| 拓展临近效应由纳米连接制备亚20nm金属Nanogaps |
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| 引用本文： | 孙艳,陈鑫,戴宁. 拓展临近效应由纳米连接制备亚20nm金属Nanogaps[J]. 半导体学报, 2008, 29(9): 1666-1669 |
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| 作者姓名： | 孙艳 陈鑫 戴宁 |
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| 作者单位： | 中国科学院上海技术物理研究所,红外物理国家实验室,上海,200083;中国科学院上海技术物理研究所,红外物理国家实验室,上海,200083;中国科学院上海技术物理研究所,红外物理国家实验室,上海,200083 |
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| 基金项目： | 上海市浦江人才基金项目 |
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| 摘 要： | 描述了一种拓展电子束光刻中的临近效应来制备特征尺寸在亚20nm的金属Nanogap的方法. 结合图形转移过程（如去胶等），利用临近效应灵活有效地制备了金属（如Au或者Ag等）Nanogap结构及其阵列. 采用GDSII软件设计图形，以电子束光刻为手段制备Nanogap的原始纳米连接图形，然后通过去胶过程获得金属的Nanogap. 另外，通过控制电子束光刻的剂量，能够把Nanogap的尺寸降低到约10nm.
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| 关 键 词： | 金属nanogap 纳米构筑技术 临近效应 电子束光刻 |
| 收稿时间： | 2008-03-08 |
| 修稿时间： | 2008-04-29 |
Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect |
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| Sun Yan,Chen Xin and Dai Ning. Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect[J]. Chinese Journal of Semiconductors, 2008, 29(9): 1666-1669 |
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| Authors: | Sun Yan Chen Xin Dai Ning |
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| Affiliation: | National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography (EBL).The proximity effect is extended to develop a flexible and practical method for preparing metal (e.g.Au or Ag) nanogaps and arrays in combination with a transfer process (e.g.,deposition/lift-off).Different from the direct gap-writing process,the nanogap precursor structures (nanoconnections) were designed by GDSII software and then written by electron beam.Following a deposition and lift-off process,the metal nanogaps were obtained and the nanogap size can be lowered to ~10nm by controlling the exposure dose in EBL. |
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| Keywords: | metal nanogap nanofabrication proximity effect electron beam lithography |
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