Differential method of analysis of luminescence spectra of semiconductors |
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Authors: | A M Emel’yanov |
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Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
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Abstract: | A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of
the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption
edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of
determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting
radiation from the sample. |
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Keywords: | |
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