Photoluminescence and heavy doping effects in InP |
| |
| Authors: | Seishu Bendapudi D N Bose |
| |
| Affiliation: | (1) R and D Division, Semiconductor Complex Limited, Phase VIII, S.A.S. Nagar, 160 059 Punjab, India;(2) Materials Science Centre, Indian Institute of Technology, 721 302 Kharagpur, India |
| |
| Abstract: | Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts
to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage. |
| |
| Keywords: | Photoluminescence heavy doping effects Burstein shift band-gap shrinkage |
| 本文献已被 SpringerLink 等数据库收录！ |
|
