| Irradiation Defects in Silicon Crystal |
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| 作者姓名： | WUCheng－long YANGDe－ren |
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| 作者单位： | StateKeyLab.ofSiliconMaterials,ZhejiangUniversity,Hangzhou310027,CHN |
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| 摘 要： | The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.
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| 关 键 词： | 硅晶体 晶体缺陷 硅材料 辐射 |
| 收稿时间： | 2002/4/12 |
Irradiation Defects in Silicon Crystal |
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| WU Cheng-long,YANG De-ren,Que Duan-lin.Irradiation Defects in Silicon Crystal[J].Semiconductor Photonics and Technology,2003,9(1):41-45. |
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| Authors: | WU Cheng-long YANG De-ren Que Duan-lin |
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| Abstract: | The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties. |
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| Keywords: | Silicon crystal Defect Irradiation CLC number:TN304Document code:A |
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