Dislocations and Stacking Faults in Ti3SiC2 |
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| Authors: | Leonid Farber Michel W. Barsoum Antonios Zavaliangos Tamer El-Raghy Igor Levin |
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| Affiliation: | Department of Materials Engineering, Drexel University, Philadelphia, Pennsylvania 19104;Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899–0001 |
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| Abstract: | The ternary carbide Ti3SIC2 fabricated by a reactive hot-press route is investigated by transmission electron microscopy. The material consists mainly of large elongated grains with planar boundaries, and is characterized by a low defect density. Dislocations are observed in the grains and at grain boundaries. Perfect dislocations with b = 1/3<1120> lying in (0001) basal planes are present. These basal plane dislocations are mobile and multiply as a result of room-temperature deformation. All of the stacking faults observed lie in the basal planes. |
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