用于光子器件的ZnO薄膜的分子束外延生长

近年 来，由于蓝绿发光二极管和激光二极管的发展，宽禁带ＩＩＩ－Ｖ族氮化行和ＺｎＳｅ基ＩＩ－ＶＩ族半导体材料成为举世瞩目的研究热点之一，取得这些进展的重要原因是材料质量的不断改善以及创新性的掺杂方法的引入。氧化锌（ＺｎＯ）是具有特殊性质的宽禁囊直接带隙ＩＩ－ＶＩ族半导体材料，具有在半导体材料中最高的激子束缚能（６０ｍｅＶ），将是另一种重要的商用光子器件材料。本文将描述高质量氧化锌单晶薄膜的等离子分子

MOLECULAR BEAM EPITAXY OF ZnO FOR PHOTONIC APPLICATIONS *

The wide bandgap III V nitride and ZnSe based II VI semiconductor materials are the focus of intense world wide research due to the recent development of blue green light emitting diodes (LEDs) and blue laser diodes (LDs). An important factor in these advances has been the continuous improvement in materials quality as well as the introduction of innovative approaches to doping. Zinc oxide (ZnO) is a wide and direct bandgap II VI semiconductor, which has some promising properties including, in particular, a high exciton binding energy of 60meV, and is another material which may yet find uses in commercial photonic devices. In this paper the plasma enhanced molecular beam epitaxy of ZnO single crystal thin film are described, and the emphasis is placed on the optically pumped lasing from ZnO and its excitonic stimulated emission mechanisms above room temperature. The possible ZnO based photonic application is discussed in the light of recent experimental findings.