| SiON薄膜中氢的研究 |
| |
| 引用本文： | 魏文霖,孟祥森,袁骏,杨辉,葛曼珍,季振国. SiON薄膜中氢的研究[J]. 材料导报, 2000, 14(3): 48-49 |
| |
| 作者姓名： | 魏文霖 孟祥森 袁骏 杨辉 葛曼珍 季振国 |
| |
| 作者单位： | 1. 浙江大学材料系,硅材料国家重点实验室.杭州,310027
2. 浙江省建筑科学设计研究院,杭州,310097 |
| |
| 摘 要： | 氢氧化硅薄膜是一种新型的薄膜材料，具有优良的光电性能，机械性能，钝化性能和化学稳定性能，但杂质氮的存在限制了它的应用。。详细阐述了氢氧化硅薄膜中氢杂质的存在活动及其对薄膜性能的影响，并提出了降低氢含量的合理方法。
|
| 关 键 词： | 氮氧化硅 薄膜 性能 杂质 氢 |
Study of Hydrogen in SiON Thin Films |
| |
| Wei Wenlin,Meng Xiangsen,Yuan Jun,Yang Hui,Ge Manzhen,Ji Zhenguo. Study of Hydrogen in SiON Thin Films[J]. Materials Review, 2000, 14(3): 48-49 |
| |
| Authors: | Wei Wenlin Meng Xiangsen Yuan Jun Yang Hui Ge Manzhen Ji Zhenguo |
| |
| Abstract: | Silicon oxynitride is a new kind of thin films. It has excellent photoelectric,mechanic and passivation properties and chemical stability, but the existence of hydrogen as an impurity limits its application. This paper reviewed the activity of hydrogen in silicon oxynitride films and its effects on their properties,and pointed out the rational ways to reduce the content of hydrogen. |
| |
| Keywords: | silicon oxymtride thin films property impurity hydrogen |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
