Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model |
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Abstract: | A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding. The approach is based on a quasi-static device model which is derived from measured bias and frequency dependence of the small-signal device S parameters. Excellent agreement is demonstrated between experimental and predicted "load-pull" characteristics at X band. |
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