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量子阱能带工程及其应用新进展
引用本文:汪忆桦. 量子阱能带工程及其应用新进展[J]. 半导体光电, 1991, 12(4): 357-362
作者姓名:汪忆桦
作者单位:中国科学院上海技术物理研究所 上海
摘    要:量子阱结构作为新一代微电子器件材料而迅速崛起。文章在阐述能带工程基本原理的基础上,重点介绍多量子阱红外探测器的进展情况。

关 键 词:量子阱 能带工程 红外探测器

Band-Gap Engineering and Recent Development in Devices Based on Quantum Well Structures
Wang Yihua. Band-Gap Engineering and Recent Development in Devices Based on Quantum Well Structures[J]. Semiconductor Optoelectronics, 1991, 12(4): 357-362
Authors:Wang Yihua
Affiliation:Wang Yihua Shanghai Institute of Technical physics,Academic Sinica Shanghai 200083
Abstract:The basic theoretical interpretation on band-gap engineering is given,and recent developments in infrared detectors based of multiple quantum wells are summarised.
Keywords:Multiple Quantum wells  Band-Gap Engineering  Infrared Detectors.
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