Characterization of some trimethyl(organylamino)silanes—precursors for preparation of silicon carbonitride films |
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| Authors: | V I Rakhlin I P Tsirendorzhieva M G Voronkov L D Nikulina S V Sysoev M L Kosinova |
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| Affiliation: | 1.Favorsky Irkutsk Institute of Chemistry, Siberian Branch,Russian Academy of Sciences,Irkutsk,Russia;2.Grebenshchikov Institute of Silicate Chemistry,Russian Academy of Sciences,St. Petersburg,Russia;3.Nikolaev Institute of Inorganic Chemistry, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
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| Abstract: | A series of aminosilanes has been synthesized by the reaction of carboxylic acid di(organyl)amides with trimethyliodsilane.
A purification method providing an increase in the yield of end products to 82% has been developed. The identity of the products
has been confirmed using an elemental analysis and IR, UV, and 1H NMR spectroscopy. The spectral characteristics of the synthesized aminosilanes have been determined. The temperature dependences
of the saturated vapor pressure have been established, and the thermodynamic characteristics of the vaporization processes
have been calculated. It has been demonstrated that the aminosilanes Me3SiNEt2, Me3SiNHAll, and Me3SiNHPh are heat resistant in the temperature range 296–452 K and have a vapor pressure sufficient for their use in the processes
of chemical vapor deposition of a substance, so that they can be recommended as precursors for synthesis of silicon carbonitride
films. |
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