Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 films |
| |
| Affiliation: | 1. Department of Physics, Harbin Institute of Technology, Harbin 150001, PR China;2. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, PR China;1. Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology, Wuhan 430074, PR China;2. State key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China;1. School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China;2. School of Ocean Information Engineering, Jimei University, Jimei District, Xiamen, 361021, Fujian, China;3. Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, 361024, China;4. Department of Materials Science and Engineering, Da-Yeh University, Dacun, Changhua, 51591, Taiwan;5. Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Road, Kaohsiung, 81148, Taiwan;1. Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram 608002, Tamilnadu, India;2. Department of Physics (FEAT), Annamalai University, Annamalai Nagar, Chidambaram 608002, Tamilnadu, India;3. Department of Physics, College of Science, University of Bahrain, PO Box 32038, Kingdom of Bahrain;1. King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451, Saudi Arabia;2. Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055, India;3. Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia |
| |
| Abstract: | Indium oxide films 25–550 Å thick were reactively evaporated at an oxygen pressure of about 0.27 Pa and at a substrate temperature between room temperature and 400°C. The dependence of the structure of the films on the substrate temperature and on the film thickness was studied using transmission electron microscopy and electron diffraction. It was found that thick films (about 550 Å) were amorphous at room temperature, partially crystallized at 50–125°C and crystalline at 150–400°C. The crystallinity of the films deposited at 150–250°C also depended markedly on the film thickness. Very thin films about 25 Å thick were quasi-amorphous, but with increasing film thickness the amorphous phase transformed into a crystalline phase.The thermal transformation of the amorphous films after deposition was also studied. Amorphous films about 550 Å thick deposited at room temperature and 100°C crystallized at 230°C and 210°C respectively. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
