Formation and properties of vacuum-evaporated high conductivity n-type CdTe films |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, ON M5S 3G4, Canada;2. Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON M5S 3H6, Canada;3. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA;4. Fujitsu Consulting (Canada) Inc, Toronto, ON, Canada;5. School of Chemical Sciences, The University of Auckland, Auckland 1010, New Zealand;6. Chemical Physics Theory Group, Department of Chemistry, University of Toronto, Toronto, ON M5S 3H6, Canada;7. Department of Computer Science, University of Toronto, Toronto, ON M5S 3H6, Canada;8. Vector Institute for Artificial Intelligence, Toronto, ON M5S 1M1, Canada;9. Lebovic Fellow, Canadian Institute for Advanced Research, Toronto, ON M5S 1M1, Canada;1. Institute of Materials Research, Washington State University, Pullman, WA 99164, USA;2. School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164, USA;3. National Renewable Energy Laboratory, Golden, CO 80401, USA |
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| Abstract: | High dark conductivity CdTe films have been prepared by co-evaporating CdTe and cadmium. The structural, electrical and optical properties were investigated. The dark conductivity of the film increased monotonically with an increase in the amount of co-evaporated cadmium. The highest dark conductivity of the films obtained in this experiment was 1.4x10-2Ω-1 cm-1. The film structure was of the zinc blende type with a preferential orientation of the (111) planes parallel to the substrate and fibrous. The crystallinity of the films was similar to that of films without cadmium doping. The dark conductivity vs. the reciprocal temperature characteristics showed regular aspects. High dark conductivity films will be useful for CdTe thin film device applications. |
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