Optical properties of AgGaSe2 thin films |
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| Affiliation: | 1. Department of Physics, College of Education, University of Basrah, Basrah 6100, Iraq;2. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China;3. International Center of Materials Physics, Chinese Academy of sciences, Shenyang 110015, China;1. CIEMAT, Department of Energy, Avda. Complutense, 40 Ed. 42, 28040 Madrid, Spain;2. CIEMAT, Department of Technology, Avda. Complutense, 40 Ed. 36, 28040 Madrid, Spain;1. College of Electro-Information Engineering, Xuchang University, Xuchang 461000, People’s Republic of China;2. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China;1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;2. Laboratory for Microstructures, Shanghai University, 99 Shangda Rd, Shanghai 200444, China |
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| Abstract: | AgGaSe2 films were grown using the flash evaporation technique on glass substrates at various substrate temperatures. The optical absorption of these films in the energy range 1.4–1.9 eV was studied and the films were found to possess direct band gap material. The photoconductivity of the AgGaSe2 films was studied as a function of (i) light intensity, (ii) temperature and (iii) response times. The photoconductivity response spectra of the AgGaSe2 films were utilized to determine the band gap energies as a function of the substrate temperature. The implications are discussed. |
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