|
|||||
|
|
Electrical properties of thin V-A1 alloy films |
|
| Affiliation: | 1. Yale School of Forestry & Environmental Studies, Yale University, 195 Prospect St, New Haven 06511, CT, United States;2. Department of Civil and Environmental Engineering, The University of California, Berkeley, Davis Hall, Berkeley 94720, CA, United States;3. Department of Materials Science and Engineering, The University of Sheffield, Sir Robert Hadfield Building, Mappin St, Sheffield S1 3JD, United Kingdom;4. Department of Civil and Structural Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin St, Sheffield S1 3JD, United Kingdom |
| Abstract: | The electrical properties of V-Al alloy films of various thicknesses and compositions were studied. The V-Al films were evaporated using an electron gun in vacuum (pressure p ≈ 10-5 Pa) onto quartz substrates at room temperature. The film resistivity vs. temperature was measured in situ in a vacuum of 10-8-10-6 Pa at temperatures ranging from 300 to 850 K. A saturation effect was observed in the resistivity. The above findings were analysed in terms of the shunt resistance model. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |