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CO2-laser-induced chemical vapour deposition of polycrystalline silicon from silane |
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| Affiliation: | 1. State Key Laboratory of Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237 (China);2. College of Chemical and Pharmaceutical Engineering, Hebei University of Science and Technology, Shijiazhuang, 050018 (China);3. School of Materials Science and Energy Engineering, Foshan University, Foshan, 528000 (China) |
| Abstract: | Silicon dots have been deposited on silicon-coated quartz substrates by continuous wave CO2-laser-induced decomposition of silane. The deposited material was determined by micro Raman scattering to be polycrystalline silicon. The height of the silicon dots was measured as a function of output laser power and irradiation time. The growth rate of silicon dots having a gaussian profile was found to be proportional to silane pressure and laser power. The laser power required for silicon melting (1683 K) was measured under specific experimental conditions. The substrate temperature could be calculated for any laser power assuming a linear temperature dependence on this power. The growth rate of silicon dots was found to be proportional to the substrate temperature. The growth kinetics of silicon dots may be limited by the number of collisions between “cold” silane molecules and the heated zone of substrates. A reaction mechanism based on this assumption is proposed in this paper. |
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