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Optical absorption and photoconductovity in amorphous indium selenide thin films
Affiliation:1. Shenzhen Key Laboratory of Special Functional Materials & Shenzhen Engineering Laboratory for Advance Technology of Ceramics, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, PR China;2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, PR China;3. JANUS (Dongguan) Precision Components Co., Ltd., PR China;4. State Key Laboratory of Solidification Processing, Carbon/Carbon Composites Research Center, Northwestern Polytechnical University, Xi''an 710072, PR China;1. Department of Physics, Arab American University, Jenin, Palestine;2. Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Materials Science and Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Cadiz, Spain;2. Department of Physics, Complutense University of Madrid, Madrid, Spain;3. Department of Physics, University Abdelmalek Essaadi FST, Tangier, Morocco;1. Physics Department, Faculty of Science- Al Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia;2. Groups of Physics at AAUJ and at Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala, India;2. School of Pure and Applied Physics, Mahatma Gandhi University, Priyadarsini Hills, Kottayam 686560, Kerala, India;3. UGC – DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhya Pradesh, India;4. Department of Physics, University College of Engineering, Panruti, Tamilnadu, India
Abstract:Optical absorption coefficient and photoconductivity measurements were performed on amorphous indium selenide thin films produced by vacuum evaporation. The dependence of the absorption coefficient α on the photon energy ħω at the edge of the absorption band is well described by the relation αh̵ω = B(h̵ω - Eopt)2 where B is a quality factor and Eopt is the optical band gap. The steady state photoconductivity as a function of the temperature and light intensity is tentatively interpreted in terms of a simple kinetic model proposed by Weiser et al.
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