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Interfacial reactions in bimetallic Ag-Sn thin film couples
Affiliation:1. NETLAB, Bogazici University, Department of Computer Engineering, Istanbul, Turkey;2. PILAB, Bogazici University, Department of Computer Engineering, Istanbul, Turkey;3. WCL, Bogazici University, Department of Electrical and Electronics Engineering, Istanbul, Turkey;1. Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, 70 Prospect Avenue, Princeton, NJ 08540, USA;2. Electrical Engineering Department, University of California, Los Angeles, 56-125B Engineering IV Building, Los Angeles, CA 90095-1594, USA;3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA;1. Department of Mechanical Engineering, Chubu University, 1200, Matsumoto-cho, Kasugai, Aichi 487-8501, Japan;2. Department of Engineering Science Laboratory, Chubu University, 1200, Matsumoto-cho, Kasugai, Aichi, 487-8501, Japan;3. Department of Applied Chemistry, Chubu University, 1200, Matsumoto-cho, Kasugai, Aichi, 487-8501, Japan
Abstract:Interfacial reactions in bimetallic Ag-Sn thin film couples have been investigated by measurement of electrical resistance and contact resistance as a function of time and temperature in order to understand kinetic behaviour in the above system where the intermetallic phase γ-Ag3Sn is formed. Since the reaction is found to start at room temperature, the conventional vacuum coating unit has been modified for preparing such films and conducting subsequent measurements without breaking the vacuum. The results from the above different methods of resistance measurement indicate that interfacial reactions are characterized by a mean diffusion coefficient of 10-13 cm2 s-1 at room temperature. X-ray diffraction indicates growth of the γ-Ag3Sn phase immediately after deposition. Scanning electron microscopy confirms the diffusion of tin into silver by grain boundary diffusion rather than by bulk diffusion. The results from transmission electron microscopy confirm the presence of a γ-Ag3Sn phase.
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