| 掺氮区熔硅单晶深能级的研究 |
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| 引用本文： | 栾洪发,梁骏吾,邓礼生,郑红军,黄大定.掺氮区熔硅单晶深能级的研究[J].半导体学报,1988,9(3):312-314. |
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| 作者姓名： | 栾洪发 梁骏吾 邓礼生 郑红军 黄大定 |
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| 作者单位： | 中国科学院半导体研究所 北京
(栾洪发，梁骏吾，邓礼生，郑红军)，中国科学院半导体研究所 北京(黄大定) |
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| 摘 要： | DLTS测量发现,在原生掺氮区熔硅单晶中,除E_c-0.20eV、E_c-0.28eV与氮相关外,E_c-0.57eV能级也与氮相关.此三能级在低于400℃、经0.5 小时退火均消失,同时测得三个与氮相关的新能级E_c-0.17eV、E_c-0.37eV和E_c-0.50eV,并研究了它们的退火行为.
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| 关 键 词： | 深能级 硅材料 氮杂质 |
Deep Level Investigation of N-Doped FZ Si Crystals |
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| Luan Hongfa/Institute of Semiconductors,Academia Sinica,BeijingLiang Junwu/Institute of Semiconductors,Academia Sinica,BeijingDeng Lisheng/Institute of Semiconductors,Academia Sinica,BeijingZheng Hongjun/Institute of Semiconductors,Academia Sinica,BeijingHuang Dading/Institute of Semiconductors,Academia Sinica,Beijing.Deep Level Investigation of N-Doped FZ Si Crystals[J].Chinese Journal of Semiconductors,1988,9(3):312-314. |
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| Authors: | Luan Hongfa/Institute of Semiconductors Academia Sinica BeijingLiang Junwu/Institute of Semiconductors Academia Sinica BeijingDeng Lisheng/Institute of Semiconductors Academia Sinica BeijingZheng Hongjun/Institute of Semiconductors Academia Sinica BeijingHuang Dading/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | |
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| Keywords: | Silicon Deep levels Nitrogen impurity |
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