| 多陷阱相干效应对氧化层电流弛豫谱的影响 |
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| 引用本文： | 许铭真,谭长华,刘晓卫,王阳元.多陷阱相干效应对氧化层电流弛豫谱的影响[J].电子学报,1992(5). |
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| 作者姓名： | 许铭真 谭长华 刘晓卫 王阳元 |
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| 作者单位： | 北京大学徽电子研究所，北京大学徽电子研究所，北京大学徽电子研究所，北京大学徽电子研究所 北京 100871，北京 100871，北京 100871，北京 100871 |
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| 摘 要： | 本文用单陷阱产生一俘获模型和一级电场因子近似弛豫函数研究了“多陷阱相干效应”对簿栅氧化层电流弛豫谱(OCRS)的影响。给出了高场下、多陷阱共存时,各陷阱OCRS峰并存的条件和峰位、峰值的修正公式。
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| 关 键 词： | 薄SiO_2 陷阱 相干效应 氧化层电流弛豫谱 |
Effect of Multi-Trap Interference on Oxide Current Relaxation Spectroscopy |
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| Xu Mingzhen,Tan changhua,Liu Xiaowei,Wang Yangyuan.Effect of Multi-Trap Interference on Oxide Current Relaxation Spectroscopy[J].Acta Electronica Sinica,1992(5). |
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| Authors: | Xu Mingzhen Tan changhua Liu Xiaowei Wang Yangyuan |
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| Abstract: | In this paper, on the grounds of the single-trap model and the first order approximation of the relaxation function of electric field factor, the effects of multi-trap interference on thin oxide current relaxation spectroscopy (OCRS) is studied. The conditions are given under which the OCRS peaks related to the different kind of traps can be observed by OCRS method when there are many kinds of traps generated in the high electric field stressing oxide layer. The corrected formulas of both peak position and peak value have been obtained. |
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| Keywords: | Thin SiO2 Trap Interference effect Oxide current relaxation spectroscopy |
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