Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al,Bi, Ag,and Cu |
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| Authors: | Tatsuya Sakamoto Tsutomu Iida Atsunobu Matsumoto Yasuhiko Honda Takashi Nemoto Junichi Sato Tadao Nakajima Hirohisa Taguchi Yoshifumi Takanashi |
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| Affiliation: | (1) Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan;(2) CREST-Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan;(3) National Institute of Advanced Industrial Science and Technology (AIST), 2266 Anagahora, Shimo-Shidami Moriyama, Nagoya 463-8560, Japan; |
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| Abstract: | The thermoelectric characteristics of commercial polycrystalline Mg2Si doped with Bi, Al + Bi, Ag, and Cu were examined. The samples for the thermoelectric measurements were prepared using the plasma-activated sintering (PAS) technique. The measured values of the Seebeck coefficient were compared with values calculated using the all-electron band-structure calculation package (ABCAP) based on a full-potential augmented-plane-wave (FLAPW) band-structure calculation in a local density approximation (LDA). For the Bi + Al-co-doped samples, the observed values of the dimensionless figure of merit, ZT, were higher than those of solely Bi-doped samples. The maximum value obtained for Bi + Al-doped Mg2Si was 0.77 at 862 K. For the Ag-doped samples, ZT was significantly lower than that of the Bi + Al-doped samples, with the maximum value being about 0.11 at 873 K. |
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