Deposits obtained by photolysis of hexamethyldisilane by ArF excimer laser (SiC thin film preparation by ArF excimer laser chemical vapor deposition, Part 2)

Thin films have been prepared by decomposition of hexamethyldisilane (HMDS) by ArF excimer laser at the fixed laser fluence of 800 J m⁻² and the substrate temperatures from 300 to 673 K and have been characterized using X-ray diffraction (XRD), scanning electron microscope observation, IR reflection spectroscopy and X-ray photoelectron spectroscopy. The XRD patterns showed the formation of 3C-SiC films but it is suggested that the films obtained at lower substrate temperature include organic functional groups, which might be derived from gaseous reaction products. Hydrogen existing in the form of Si-CH₂-Si could be decreased by decreasing the partial pressures of HMDS.