1330 V, 67 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC(0001) RESURF MOSFET |
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Authors: | Kimoto T Kawano H Jun Suda |
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Affiliation: | Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan; |
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Abstract: | Design and fabrication of 4H-SiC(0001) lateral MOSFETs with a two-zone reduced surface field structure have been investigated. The dose dependencies of experimental breakdown voltage show good agreement with simulation. Through the optimization of implant dose, high-temperature (1700/spl deg/C) annealing after ion implantation, and reduction of channel length, a breakdown voltage of 1330 V and a low on-resistance of 67 m/spl Omega//spl middot/cm/sup 2/ have been obtained. The figure-of-merit (V/sub B//sup 2//R/sub on/) of the present device reaches 26 MW/cm/sup 2/, being the best performance among lateral MOSFETs reported. The temperature dependence of static characteristics is also presented. |
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